Binary III-V Semiconductor Plasma Etch Rates

Published: 14 May 2025| Version 1 | DOI: 10.17632/8jx53976pn.1
Contributor:
Alison Clarke

Description

Etch rate data gathered from plasma etching results reported in the literature for the main binary III-Vs. This dataset provides detailed information on the plasma etching of binary III-V semiconductors reported in the literautre. Each entry is identified by the last name of the first author and publication date and includes a link to the source or publication, the III-V material that was etched, the technique used for etching, the main chemical etchant(s) used, and the associated etch rate or range of etch rates. Etch rates were either extracted directly from the text or obtained by digitizing figures.

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Institutions

  • University of Ottawa

Categories

Surface Etching, Reactive Ion Etching, III-V Semiconductor

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