Data for: Cobalt Germanide Nanostructure Formation and Memory Characteristic Enhancement in Silicon Oxide Films

Published: 25 April 2018| Version 1 | DOI: 10.17632/98b5sn2dzx.1
Contributors:
Moonsup Han,
Seunghun Jang,
Dongwoo Han,
Beom Soo Joo,
Hyunseung Kim

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Figure S1. C-V characteristics of the annealed samples comprising charge trap layer with Co and Ge alone.

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Capacitance Measurement

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