Multiphysics Modeling and Uncertainty Quantification on Oxide-based Resistive Random Access Memory
Published: 18 May 2026| Version 2 | DOI: 10.17632/drcgy374gm.2
Contributor:
廖 紫嫣Description
To provide a more intuitive visualization of the CF growth dynamics described in the phase-field model of the Master's Thesis of Sun Yat-sen University, the appendix includes the corresponding animated demonstrations for Figures 5-2, 5-4, 5-5, 5-7, and 5-9 in Chapter 5.
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Institutions
- Sun Yat-sen UniversityGuangdong, Guangzhou
Categories
Phase Field Model, Resistive Random-Access Memory