Data for: Formation mechanism of high Ge content SiGe epilayer on Si by liquid phase epitaxy using Ge-Sn Solution
Published: 27 April 2020| Version 1 | DOI: 10.17632/dxhvtnczfz.1
Contributor:
Wu-Yih Uen
Description
Raman scattering analysis results obtained from several SiGe-on-Si samples.
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Engineering