Elucidating the Role of Oxidation in Two-dimensional Silicon Nanosheets

Published: 27 December 2024| Version 1 | DOI: 10.17632/f3jcwz7tdj.1
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We report a synthetic protocol that yields hydrogen-terminated 2D silicon nanosheets with greatly reduced siloxane (e.g., Si-O-Si, OXSi) content. These nanosheets displayed weak, broad photoluminescence centered near 610 nm with an absolute photoluminescence quantum yield as low as 0.3%. Intentional oxidization of the nanosheets blueshifted the photoluminescence peak to 510 nm and increased the quantum yield by more than an order of magnitude to 8.5%. These results show that controlled oxidation modulates the bandgap of 2D silicon and that previously reported photoluminescence properties for this material resulted, in part, from oxidation.

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Semiconductor, Optoelectronics, Nanomaterials, Silicon, Photonics, Photoluminescence, Nanochemistry, 2D Nanomaterials

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Article
https://pubs.rsc.org/en/Content/ArticleLanding/2025/NH/D4NH00387J
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