Dataset: Position-Specific UVO Treatment on Dual-Active-Layer IGTO TFTs
Description
This dataset contains the electrical characterisation data of dual-active-layer amorphous IGTO thin-film transistors (TFTs) treated with ultraviolet–ozone (UVO) at two different positions within the channel stack. Two factors are varied: the treatment position (top layer or bottom layer) and the UVO duration (0, 10, 15, 20 and 25 min), where 0 min is the untreated reference. It comprises 10 device conditions and 1,010 transfer-curve datapoints, each measured by sweeping the gate voltage from −10 V to 40 V at a constant drain bias of 10 V (V_DS = 10 V), for devices with a channel W/L of 50/1 and a 100 nm SiO₂ gate dielectric. The data show that the effect of UVO treatment depends on which layer is treated: top-layer treatment mainly suppresses the off-state current, whereas bottom-layer treatment mainly improves carrier transport, raising saturation mobility, on-state current and the current on/off ratio.
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Institutions
- University of Electronic Science and Technology of ChinaSichuan, Chengdu