Data for: Hydrogen dissociation and diffusion near the Si < 111 > /a-SiO2 interface: understanding degradation in MOSFETs

Name: Data for: Hydrogen dissociation and diffusion near the Si < 111 > /a-SiO2 interface: understanding degradation in MOSFETs
Creator: Arash Sheikholeslam
Published: 2018-06-22T10:44:19.959Z
Keywords: Electrical Engineering, Chemistry, Materials Science

Sheikholeslam, Arash; grecu, Cristian; Ivanov, Andre; Manzano, Hegoi

doi:10.17632/fvd5k48mzp.1

Data for: Hydrogen dissociation and diffusion near the Si < 111 > /a-SiO2 interface: understanding degradation in MOSFETs

Published: 22 June 2018| Version 1 | DOI: 10.17632/fvd5k48mzp.1

Contributors:

Arash Sheikholeslam,

Cristian grecu,

Andre Ivanov,

Hegoi Manzano

Description

Initial xyz data of Si/SiO2 interface with hydrogen passivated dangling bonds.

Data for: Hydrogen dissociation and diffusion near the Si < 111 > /a-SiO2 interface: understanding degradation in MOSFETs

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