Data for: Hydrogen dissociation and diffusion near the Si < 111 > /a-SiO2 interface: understanding degradation in MOSFETs

Published: 22 June 2018| Version 1 | DOI: 10.17632/fvd5k48mzp.1
Contributors:
Arash Sheikholeslam, Cristian grecu, Andre Ivanov, Hegoi Manzano

Description

Initial xyz data of Si/SiO2 interface with hydrogen passivated dangling bonds.

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Electrical Engineering, Chemistry, Materials Science

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