Data for: Hydrogen dissociation and diffusion near the Si < 111 > /a-SiO2 interface: understanding degradation in MOSFETs
Published: 22 June 2018| Version 1 | DOI: 10.17632/fvd5k48mzp.1
S. Arash Sheikholeslam,
Initial xyz data of Si/SiO2 interface with hydrogen passivated dangling bonds.
Electrical Engineering, Chemistry, Materials Science