Data for: Bipolar resistive switching characteristics of PbZrO3/LaNiO3 heterostructure thin films prepared by a sol-gel process

Published: 20 October 2020| Version 1 | DOI: 10.17632/gmd86p775b.1
Contributor:
Lun-Quan Wang

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Data for: Bipolar resistive switching characteristics of PbZrO3/LaNiO3 heterostructure thin films prepared by a sol-gel process

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Materials Physics

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