Data for: Bipolar resistive switching characteristics of PbZrO3/LaNiO3 heterostructure thin films prepared by a sol-gel process

Name: Data for: Bipolar resistive switching characteristics of PbZrO3/LaNiO3 heterostructure thin films prepared by a sol-gel process
Creator: Lun-Quan Wang
Published: 2020-10-20T04:55:43.949Z
Keywords: Materials Physics

Wang, Lun-Quan

doi:10.17632/gmd86p775b.1

Data for: Bipolar resistive switching characteristics of PbZrO3/LaNiO3 heterostructure thin films prepared by a sol-gel process

Published: 20 October 2020| Version 1 | DOI: 10.17632/gmd86p775b.1

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Lun-Quan Wang

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Data for: Bipolar resistive switching characteristics of PbZrO3/LaNiO3 heterostructure thin films prepared by a sol-gel process

Data for: Bipolar resistive switching characteristics of PbZrO3/LaNiO3 heterostructure thin films prepared by a sol-gel process

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