Ga2O3_Si_dataset
Description
Ga2O3_SI, XRD, Raman measurements
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Raman spectroscopy was employed to determine the structural phase and crystal quality of the Ga₂O₃ thin films on the Si substrate. The measurements were carried out in a quasi-backscattering geometry using a Horiba Jobin-Yvon T64000 triple spectrometer integrated with an Olympus BX-41 microscope. Experiments were conducted at room temperature using the 532-nm line from a diode-pumped solid-state (DPSS) laser (Spectra-Physics). X-ray diffraction (XRD) measurements were performed in Bragg–Brentano geometry on a Philips X’Pert PRO-MRD diffractometer using Cu Kα₁ radiation (λ = 1.5406 Å), with an anodic voltage of 45 kV and a current of 40 mA. Qualitative phase analysis of the XRD patterns was carried out using HighScore software (Malvern Panalytical).
Institutions
- University College Dublin