Research Data for Numerical Investigation of ZnO/CdS/CdSeTe/CdTe Thin-Film Solar Cells

Published: 24 September 2026| Version 1 | DOI: 10.17632/h2494268zr.1
Contributor:
Djamal ZERIGUI

Description

The dataset contains numerical simulation data generated using SCAPS-1D for the investigation and optimization of ZnO/CdS/CdSeTe/CdTe thin-film solar cells. The data were obtained from one-dimensional numerical simulations under standard AM1.5G illumination and include photovoltaic parameters, current density–voltage characteristics, external quantum efficiency, band-energy profiles, and the dependence of device performance on selected material and interface parameters. The dataset was generated to investigate the influence of absorber-layer configuration, carrier concentration, defect density, interface properties, band alignment, series resistance, shunt resistance, and operating temperature on the photovoltaic performance of the proposed device. Particular attention was given to the CdSeTe/CdTe dual-absorber structure and to the effect of the conduction-band offset at the CdSeTe/CdTe heterointerface. The numerical results include the open-circuit voltage (Voc), short-circuit current density (Jsc), fill factor (FF), and power conversion efficiency (η), together with the corresponding simulation parameters. The data also contain current density–voltage curves and spectral response data used to analyze carrier generation and collection in the different absorber regions. Band-diagram data provide the spatial distributions of the conduction-band edge, valence-band edge, electron quasi-Fermi level, and hole quasi-Fermi level. The results show how the photovoltaic response changes with absorber doping concentration, bulk defect density, interface defect density, band alignment, electrical resistance, and temperature. The dataset can therefore be used to reproduce the numerical analyses reported in the associated manuscript, verify the plotted results, and perform additional simulations or comparative studies of thin-film photovoltaic structures. All data are numerical outputs of SCAPS-1D simulations and should be interpreted within the assumptions and physical models implemented in SCAPS-1D. The files are provided in machine-readable formats where applicable and can be used for data visualization, numerical comparison, parameter-sensitivity analysis, and reproduction of the reported photovoltaic results.

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