Data for: Investigation of c-Si surface passivation using thermal ALD deposited HfO2 films
Published: 15 February 2019| Version 1 | DOI: 10.17632/hdw9jz8bdz.1
Contributors:
Adel Gougam, Abdulla Bin Afif, Bilal RajabDescription
These data provide the curves of effective lifetimes as measured in our ALD samples in different thermal annealing conditions. As set of C-V data were used to extract the Dit and Qf values for the thin dielectric film.
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Categories
Dielectric-Semiconductor Interface, Surface Charge, Surface Passivation, Capacitance Measurement