Data for Thermally activated defects in float zone silicon: Effect of nitrogen on the introduction of deep level states

Published: 17 July 2018| Version 1 | DOI: 10.17632/jgwhkcj6c5.1
Contributors:
Jack Mullins,
Vladimir P. Markevich,
Michelle Vaqueiro-Contreras,
Nicholas E. Grant,
Leif Jensen,
Jarosław Jabłoński,
John Murphy,
Matthew P. Halsall,
Anthony R. Peaker

Description

Data behind graphs presented in "Thermally activated defects in float zone silicon: Effect of nitrogen on the introduction of deep level states" The dataset (provided as a single file in XLSX format) contains the data behind the graphs presented in the paper. Each worksheet within the spreadsheet relates to a single figure in the paper. Captions to the figures are given in the paper. Abbreviations, variables and methods used are defined in the paper.

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Institutions

The University of Manchester, University of Warwick

Categories

Silicon, Silicon Solar Cell, Deep-Level Transient Spectroscopy

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