Multiphysics Modeling and Uncertainty Quantification on Oxide-based Resistive Random Access Memory
Published: 18 May 2026| Version 1 | DOI: 10.17632/m8jnp2npph.1
Contributor:
廖 紫嫣Description
To more intuitively display the distributions of the oxygen vacancy concentration, temperature, and potential in the drift-diffusion model of the Master's Thesis of Sun Yat-sen University, the appendix provides the corresponding animated demonstrations for Figures 4-4, 4-5, 4-6, 4-7, and 4-12 in Chapter 4.
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Institutions
- Sun Yat-sen UniversityGuangdong, Guangzhou
Categories
Resistive Random-Access Memory