Substrate-temperature-driven phase evolution and dielectric response of pulsed-laser-deposited Nb2O5 thin films

Description

The datasets uploaded with this article contain the raw and processed data used in the study, including XRD patterns, SEM micrographs, impedance spectroscopy measurements, and calculated dielectric parameters of Nb₂O₅ thin films deposited at substrate temperatures of 200, 450, 600, and 700 °C. The data support the analysis of phase composition, surface morphology, frequency-dependent dielectric constant, dielectric loss, and resistance behavior. These datasets are made available to ensure transparency and reproducibility of the reported results.

Institutions

• University of Hong Kong

  Southern, Pok Fu Lam

Categories

Licence