Data for: Influence on Curvature Induced Stress to the Flatband Voltage and Interface Density of 4H-SiC MOS Structure

Published: 11 Oct 2018 | Version 1 | DOI: 10.17632/ms5nxv5px3.1
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Description of this data

The data details including the followings.
Figure 1. C-V characteristics of n-type 4H-SiC (0001) MOS capacitor.
Figure 2. The relationship between curvature and Vfb.
Figure 3. Interface defect state density (Dit) as a function of energy level below the conduction band of SiC, estimated by the C-ψs method, measured at room .
Figure 4. The relationship between curvature and Dit @Ec-E=0.2eV.
Figure 5. Infrared spectra of thermally grown SiO2.
Figure 6. Change of LO wavenumbers with curvature.

Experiment data files

This data is associated with the following publication:

Influence on curvature induced stress to the flatband voltage and interface density of 4H-SiC MOS structure

Published in: Journal of Crystal Growth

Latest version

  • Version 1

    2018-10-11

    Published: 2018-10-11

    DOI: 10.17632/ms5nxv5px3.1

    Cite this dataset

    Xu, Hengyu (2018), “Data for: Influence on Curvature Induced Stress to the Flatband Voltage and Interface Density of 4H-SiC MOS Structure”, Mendeley Data, v1 http://dx.doi.org/10.17632/ms5nxv5px3.1

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