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Currently, the issue of perovskite film quality poses a challenge in the preparation of electroluminescent devices employing metal halide perovskites. In this paper, high quality perovskite films were prepared on sol-gel ZnO (s-ZnO) modified by poly [9-vinylcarbazole] (PVK). The formation of an N-H bond between PVK and perovskite improved film quality and reduced trap state density. The resulting PVK modified high efficiency green light-emitting diodes achieved a maximum current efficiency of 17.5 cd/A, which is 30% higher than the unmodified device. Additionally, the lifetime of the device was improved by 60%.

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