Raman of SiC
Published: 1 September 2026| Version 1 | DOI: 10.17632/rh8gws8hm3.1
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彦名 潘Description
In situ Raman spectra of 3C‑SiC and 6H‑SiC were collected under ambient pressure and high temperature, room temperature and high pressure, and simultaneous high temperature and high pressure conditions. The measurement ranges were 300–1500 K for the ambient‑pressure high‑temperature condition, 0–60 GPa for the room‑temperature high‑pressure condition, and 300–800 K with 0–60 GPa for the simultaneous high‑temperature high‑pressure condition, respectively.
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Institutions
- China University of GeosciencesHubei, Wuhan
Categories
Raman Spectroscopy, Silicon Carbide