20-day resistance data_annealed after encapsulation

Published: 12 September 2026| Version 1 | DOI: 10.17632/s89jgccjvb.1
Contributor:
Wanghoon Lee

Description

This file contains the individual 20-day resistance data for PEDOT:PSS temperature sensor elements annealed after encapsulation (E-series). Devices were first encapsulated with a PI/epoxy cover and then annealed at 150, 200, or 220 °C for 10 min. For each annealing temperature, four devices were stored under outdoor, indoor, water-immersion, and auto-desiccator conditions. Resistance was measured at 25 °C on Days 0, 1, 2, 3, 4, 7, 10, 13, 16, and 20. Resistance values are reported in kΩ.

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Steps to reproduce

PEDOT:PSS temperature sensor elements were fabricated by inkjet printing on plasma-treated polyimide substrates. Devices were annealed at 150, 200, or 220 °C for 10 min either before encapsulation (U-series) or after encapsulation (E-series). For each process condition, one device was stored under each of four environments: outdoor exposure, indoor storage, water immersion, and auto-desiccator storage. Before each measurement, the devices were conditioned at 25 °C for 5 min in a climatic test chamber. Electrical resistance was then measured using an Agilent U1273A digital multimeter. Measurements were performed on Days 0, 1, 2, 3, 4, 7, 10, 13, 16, and 20. Resistance values are reported in kΩ. Normalized resistance was calculated as R(t)/R(0), and resistance drift was calculated relative to the Day-0 resistance.

Categories

Electronics, Sensor

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