Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structures

Published: 18 October 2017| Version 2 | DOI: 10.17632/tdzkmm5gw3.2
Contributor:
Philip Dawson

Description

Experimental data used for figures in paper submitted to Applied Physics Letters

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Institutions

The University of Manchester

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Physics

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