Spot Profile Analysis Low Energy Electron Diffraction of Plasma-Enhanced Chemical Vapor Deposition Grown Epitaxial Few-Layer Graphene on Sapphire

Published: 16 July 2026| Version 1 | DOI: 10.17632/vrpw9ryv77.1
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SPA-LEED and Raman data of PECVD grown graphene on Al2O3. The samples were degassed in UHV (as-grown, 30WA00XX series) and then annealed at 840 °C (30WA50XX series) and 960 °C (30WB75XX series). The instrumental response function of the SPA-LEED was measured from a carbonized Al2O3(0001) surface (ST04NXXX series). A Si(111) sample (SI111 series) was used as a reference for distortion correction. Raman Data was despiked, denoised, baseline-corrected and normalized to the D peak intensity in RamanSPy 0.2.10.

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Surface Science, Condensed Matter Physics, Raman Spectroscopy, Applied Physics, Graphene, Low-Energy Electron Diffraction, Sapphire, Two-Dimensional Material

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