Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities

Published: 30 May 2018| Version 1 | DOI: 10.17632/w4fz4d8mfz.1
Contributors:
George Christian, Philip Dawson, Stefan Schulz, David Binks, Menno Kappers, Colin Humphreys, Rachel Oliver

Description

Time-integrated and time-resolved photoluminescence spectra, and experimental and simulated photoluminescence time decays, at different excitated carrier densities in InGaN/GaN single quantum well structures.

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Institutions

  • Tyndall National Institute
  • The University of Manchester
  • University of Cambridge

Categories

Semiconductors, Optical Spectroscopy, Photoluminescence, Quantum Well

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