Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities

Published: 30-05-2018| Version 1 | DOI: 10.17632/w4fz4d8mfz.1
Contributors:
George Christian,
Philip Dawson,
Stefan Schulz,
David Binks,
Menno Kappers,
Colin Humphreys,
Rachel Oliver

Description

Time-integrated and time-resolved photoluminescence spectra, and experimental and simulated photoluminescence time decays, at different excitated carrier densities in InGaN/GaN single quantum well structures.

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