Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities
Published: 30 May 2018| Version 1 | DOI: 10.17632/w4fz4d8mfz.1
Time-integrated and time-resolved photoluminescence spectra, and experimental and simulated photoluminescence time decays, at different excitated carrier densities in InGaN/GaN single quantum well structures.
Tyndall National Institute, The University of Manchester, University of Cambridge
Semiconductors, Optical Spectroscopy, Photoluminescence, Quantum Well