Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities

Published: 30 May 2018 | Version 1 | DOI: 10.17632/w4fz4d8mfz.1

Description of this data

Time-integrated and time-resolved photoluminescence spectra, and experimental and simulated photoluminescence time decays, at different excitated carrier densities in InGaN/GaN single quantum well structures.

Experiment data files

Latest version

  • Version 1


    Published: 2018-05-30

    DOI: 10.17632/w4fz4d8mfz.1

    Cite this dataset

    Christian, George; Dawson, Philip; Schulz, Stefan; Binks, David; Kappers, Menno; Humphreys, Colin; Oliver, Rachel (2018), “Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities”, Mendeley Data, v1


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Tyndall National Institute, The University of Manchester, University of Cambridge


Semiconductors, Optical Spectroscopy, Photoluminescence, Quantum Well


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