Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities
Published: 30 May 2018| Version 1 | DOI: 10.17632/w4fz4d8mfz.1
Contributors:
, , , , , , Description
Time-integrated and time-resolved photoluminescence spectra, and experimental and simulated photoluminescence time decays, at different excitated carrier densities in InGaN/GaN single quantum well structures.
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Institutions
Tyndall National Institute, The University of Manchester, University of Cambridge
Categories
Semiconductors, Optical Spectroscopy, Photoluminescence, Quantum Well