Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities

Published: 30 May 2018 | Version 1 | DOI: 10.17632/w4fz4d8mfz.1
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Description of this data

Time-integrated and time-resolved photoluminescence spectra, and experimental and simulated photoluminescence time decays, at different excitated carrier densities in InGaN/GaN single quantum well structures.

Experiment data files

Latest version

  • Version 1

    2018-05-30

    Published: 2018-05-30

    DOI: 10.17632/w4fz4d8mfz.1

    Cite this dataset

    Christian, George; Dawson, Philip; Schulz, Stefan; Binks, David; Kappers, Menno; Humphreys, Colin; Oliver, Rachel (2018), “Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities”, Mendeley Data, v1 http://dx.doi.org/10.17632/w4fz4d8mfz.1

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Institutions

Tyndall National Institute, The University of Manchester, University of Cambridge

Categories

Semiconductors, Optical Spectroscopy, Photoluminescence, Quantum Well

Licence

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The files associated with this dataset are licensed under a Creative Commons Attribution 4.0 International licence.

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