Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities
Description of this data
Time-integrated and time-resolved photoluminescence spectra, and experimental and simulated photoluminescence time decays, at different excitated carrier densities in InGaN/GaN single quantum well structures.
Experiment data files
Cite this dataset
Christian, George; Dawson, Philip; Schulz, Stefan; Binks, David; Kappers, Menno; Humphreys, Colin; Oliver, Rachel (2018), “Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities”, Mendeley Data, v1 http://dx.doi.org/10.17632/w4fz4d8mfz.1
The files associated with this dataset are licensed under a Creative Commons Attribution 4.0 International licence.