Data For: Disorder-broadened topological Hall phase and anomalous Hall scaling in FeGe
Description
Magnetic skyrmions are promising candidates for next-generation spintronic memory and logic due to their nanoscale size and topological stability. However, skyrmion-based devices remain limited by narrow operating temperature windows that typically exclude cryogenic regimes critical for quantum-hybrid architectures. Here, we demonstrate that ion-beam-engineered disorder landscapes in B20-phase FeGe thin films dramatically extend the temperature window over which the topological Hall-like signal is observed, from \SIrange{280}{80}{\kelvin} in pristine films down to liquid-helium temperatures (\SI{4}{\kelvin}) in most irradiated samples. The disorder-broadened topological Hall phase exhibits doubled signal amplitude compared to pristine films, consistent with enhanced chiral spin-texture density. Simultaneously, we achieve systematic tunability of the anomalous Hall response by transitioning between distinct scattering regimes via ion-beam modification. Scanning transmission electron microscopy and electron ptychography reveal that nanoscale point-defect clusters could drive these emergent properties. These findings establish defect-landscape engineering as a versatile strategy to extend the stability of the topological Hall phase, offering a general framework for tailoring topological spin textures in next-generation cryogenic spintronic architectures. This dataset includes Python code used to process the data and Origin files (.opj) that contain data spreadsheets for all the samples and figures used in this paper, which can be opened with Origin Viewer, a free application that allows viewing and copying of data in Origin project files.
Files
Institutions
- University of WashingtonWA, Seattle
- University of Nebraska-LincolnNE, Lincoln
- Cornell UniversityNY, Ithaca
- Sandia National LaboratoriesNM, Albuquerque
- Los Alamos National LaboratoryNM, Los Alamos
- University of OklahomaOK, Norman
Categories
Funders
- U.S. National Science FoundationGovernment of the United States of AmericaUnited StatesGrant ID: 1905909
- U.S. National Science FoundationGovernment of the United States of AmericaUnited StatesGrant ID: 2330562
- U.S. National Science FoundationGovernment of the United States of AmericaUnited StatesGrant ID: 2325089
- U.S. National Science FoundationGovernment of the United States of AmericaUnited StatesGrant ID: 2439947
- Materials Research Science and Engineering CentersU.S. National Science FoundationUnited StatesGrant ID: 2308979
- U.S. National Science FoundationGovernment of the United States of AmericaUnited StatesGrant ID: 2039380
- National Nuclear Security AdministrationUnited States Department of EnergyUnited StatesGrant ID: 89233218CNA000001