Amorphous Ge quantum dot networks in SiC and Si3N4 matrices for application in photosensitive devices

Published: 12 February 2025| Version 1 | DOI: 10.17632/ygvf6kpgxy.1
Contributor:
Maja Mičetić

Description

It contains data including GISAXS, optical, current-voltage and spectral response of thin films consisting of Ge QDs embedded in SiC and Si3N4 matrices

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Categories

Germanium, Quantum Dot, Detector, Silicon Carbide Material, Silicon Nitride, Photosensor

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