Amorphous Ge quantum dot networks in SiC and Si3N4 matrices for application in photosensitive devices

Published: 12 February 2025| Version 1 | DOI: 10.17632/ygvf6kpgxy.1
Contributor:
Maja Mičetić

Description

It contains data including GISAXS, optical, current-voltage and spectral response of thin films consisting of Ge QDs embedded in SiC and Si3N4 matrices

Files

Categories

Germanium, Quantum Dot, Detector, Silicon Carbide Material, Silicon Nitride, Photosensor

Funding

Croatian Science Foundation

IP-2022-10-3765

Licence