Efficiency Gain with UV Irradiation
Description
To explore the related mechanism behind the efficiency gain of TOPCon cells under UV light exposure, an experimental workflow is designed. The results of different TOPCon precursor samples with and without UV process are analyzed by WCT120, Photoluminescence (PL) and Fourier Transform Infrared Spectroscopy (FTIR). Correspondingly, the electrical properties of solar cells are mainly characterized before and after the optimized UV process by using a current-voltage (I-V) tester, Suns-Voc in this experiment. For precursors, the minority carriers’ lifetime (MCL) , the recombination current (J0) and implied open circuit voltage (iVoc) are measured by WCT120, and PL images and counts are provided BTi image PL. FTIR is used in this experiment to seek for the relationship of bonds in AlOₓ and SiNx passivation quality. The peak for the Al-OH bond is observed roughly at 1080 cm⁻¹, and that for the Si-H bond appears at around 2200 cm⁻¹ in the FTIR spectrum. For cells, the pseudo-FF (pFF) and Voc are calculated by Suns-Voc, and IV data are derived by I-V tester to validate the efficiency gain.