Journal of Crystal Growth

Gallium nitride on Silicon substrate.

GaN on Si.

There are four data sheets in this file. This table 1 is the raw data for the determination of the thermal conductivity of caprolactam. The Table 2 shows some dimensionless parameters for data processing during the growth of the crystal layer. The Table 3 is the nonlinear correlation coefficient between the experimental value and the fitting value of the crystal layer diameter and the refrigerant temperature change, and The Table 4 is the nonlinear correlation coefficient between the experimental value and the fitting value of the crystal layer diameter as a function of the temperature drop rate.

The data details including the followings. Figure 1. C-V characteristics of n-type 4H-SiC (0001) MOS capacitor. Figure 2. The relationship between curvature and Vfb. Figure 3. Interface defect state density (Dit) as a function of energy level below the conduction band of SiC, estimated by the C-ψs method, measured at room . Figure 4. The relationship between curvature and Dit @Ec-E=0.2eV. Figure 5. Infrared spectra of thermally grown SiO2. Figure 6. Change of LO wavenumbers with curvature.

The source data file for a publication: "Molecular Beam Epitaxy growth of MoTe2 on Hexagonal Boron Nitride", B. Seredyński, R. Bożek, J. Suffczyński, J. Piwowar, J. Sadowski, W. Pacuski, Journal of Crystal Growth 596, 126806 (2022). https://doi.org/10.1016/j.jcrysgro.2022.126806Abstract:Hexagonal boron nitride has already been proven to serve as a decent substrate for high quality epitaxial growth of several 2D materials, such as graphene, MoSe2, MoS2 or WSe2. Here, we present for the first time the molecular beam epitaxy growth of MoTe2 on atomically smooth hexagonal boron nitride (hBN) substrate. Occurrence of MoTe2 in various crystalline phases such as distorted octahedral 1T’ phase with semimetal properties or hexagonal 2H phase with semiconducting properties opens a possibility of realization of crystalphase homostructures with tunable properties. Atomic force microscopy studies of MoTe2 grown in a single monolayer regime enable us to observe impact of growth conditions on formation of various structures: flat grains, net of one-dimensional structures, quasi continuous monolayers with bilayer contribution. Comparison of the distribution of the thickness with Poisson distribution shows that tested growth conditions favorite formation of grains with monolayer thickness. The diffusion constant of MoTe2 grown on hBN can reach order of 10−6 cm2/s for typical growth conditions. Raman spectroscopy results suggest a coexistence of various phases with domination of 2H MoTe2 for samples grown at lower temperatures. XPS measurements confirm the stoichiometry of MoTe2.

Transition metal carbides exhibit many excellent mechanical and physical properties such as high hardness and high melting points. There are at least two phases of Mo2C: one is the hexagonal phase, another one is the orthorhombic phase. The latter one is a slightly distorted hexagonal closed-packed structure. Single crystal of the orthorhombic phase has been grown via floating zone method. In this manuscript, single crystal of hexagonal phase Mo2C, is grown via La-C flux method. Its structure and physical properties were characterized. Superconducting parameters were obtained.

In order to quantify and verify the quality of the growth of the Type-II superlattice X-ray diffraction (XRD) was used. The peaks in the XRD data correspond to different atomic spacings within the structure. From this it is possible to quantify exactly what was grown in terms of both composition and layer thickness. The XRD data is in .X01 format and can be opened with the open source X'Pert Epitaxy to view the peaks. Fourier transform infrared spectroscopy was used to characterise the photoluminescence (PL) performance of the T2SL from 77 K to 300 K as shown in Fig. 5a. A 671 nm Diode-Pumped Solid State (DPSS) laser was used to pump the sample to acquire PL. The PL data is presented as an .xlsx file with the first column corresponding to the wavelength and each column after that corresponding to a different temperature. The width of the peaks is a good indicator to the quality of the sample.

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Figure 1. (a) 2θ-ω scan recorded around the α-Al2O3 0006 reflection. Rocking curve ω scans recorded on the (b) α-Ga2O3 0006 and (c) α-Ga2O3 10-14 reflections. RSMs around the (d) α-Al2O3 0006 and (e) α-Al2O3 10-110 reflections. Figure 2. (a) ADF-STEM and (b) HR-TEM image of the sample observed along the α-Al2O3 〈11-20〉 zone-axis. In inset, ABSF-filtered (average background subtraction filter) image of the interface region indicated with a square in (b). Figure 3. SED of the Ga2O3 film observed near the α-Al2O3 〈11-20〉 zone-axis. (a) Composite diffraction contrast image formed plotting the intensity of selected reflections as a function of probe position. Green corresponds to reflections in the α-Ga2O3 〈11-20〉 zone-axis pattern and red corresponds to additional reflections identified in the data. Inset shows the intensity of the direct beam revealing the full extent of the film including non-diffracting components. Representative diffraction patterns (b) from the α-Ga2O3 columns, (c-d) from the tips which are most likely ε-Ga2O3.

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