Journal of Crystal Growth

GaN on Si.

Gallium nitride on Silicon substrate.

There are four data sheets in this file. This table 1 is the raw data for the determination of the thermal conductivity of caprolactam. The Table 2 shows some dimensionless parameters for data processing during the growth of the crystal layer. The Table 3 is the nonlinear correlation coefficient between the experimental value and the fitting value of the crystal layer diameter and the refrigerant temperature change, and The Table 4 is the nonlinear correlation coefficient between the experimental value and the fitting value of the crystal layer diameter as a function of the temperature drop rate.

The data details including the followings. Figure 1. C-V characteristics of n-type 4H-SiC (0001) MOS capacitor. Figure 2. The relationship between curvature and Vfb. Figure 3. Interface defect state density (Dit) as a function of energy level below the conduction band of SiC, estimated by the C-ψs method, measured at room . Figure 4. The relationship between curvature and Dit @Ec-E=0.2eV. Figure 5. Infrared spectra of thermally grown SiO2. Figure 6. Change of LO wavenumbers with curvature.