Thin Solid Films

Refractive index data for VO2 grown by thermal oxidation

XRD data

Transmission data files

Files from SIMS measurements

Hall effect data files

Result Origin file with RBS data

Data of lattice parameters, Raman spectra and J-V curve of CeO2:Gd

Process sequences for the preparation of light-induced plated (LIP) silicon heterojunction (SHJ) solar cell front side metallization on transparent conducting oxide (TCO) by a) printing an Ag seed layer and by b) printing an organic local mask. Cu adherence to the TCO is promoted by LIP of less than1 µm thick Ni seed layer. Note that the existent rear side metallization and TCO layer are not shown.

Figures 1 to 7 are surface images of Cu(In,Ga)Se2 of different Ga content ( x=[Ga]/([Ga]+[In])=30%, 60% and 100%) before and after annealing at 350°C under vacuumfor 30 days. The Raman analysis was performed at the surface of two Cu(In,Ga)Se2 samples with x=30% and 60% before and after annealing at 350°C under vacuum for 30 days. The XRD analysis was performed on Cu(In,Ga)Se2 layers of 1) x=30%, 2) x=60% before after annealing at 350°C under vacuum for 30 days and 3) on a CuGaSe2 layer (x=100%) The EDS cartography was performed on a CuGaSe2 layer after annealling aunder vacuum for 24h at 350°C All the CIGSe films were grown on soda-lime glass/Mo substrate by physical vapor deposition using the Cu-RO process

- The CuGaSe2 was synthesized using the sequential CuPRO process and the modified CuPROM process that implies 2 relaxation stages during the co-evaporation. - The Raman analysis was performed at the front and rear CuGaSe2 surface using 633 nm excitation wavelength. The .dat files contain the raw data of the Raman analysis - The .opj file contains the photovoltaic parameters (Voc, Jsc, FF and η) of the solar cells fabricated from CuGaSe2 absorbers. - The CuGaSe2-based thin-film solar cells consist of the following layers stack Mo/CGSe/CdS/ZnO/ZnO:Al deposited on 1 mm-thick soda-lime glass (SLG) substrate