Surfaces and Interfaces

Minimum and maximum surface Pt vacancy formation energy (E_svf(min) (eV), E_svf(max) (eV)), intrinsic surface segregation energy (ISS(eV)), and oxygen-induced surface segregation energy (OISS(eV)) of M and N with respect to PtxMyNz alloy surfaces.

These data was obtained with investigations described in the article.

A novel octagonal micro pyramid structure was formed by etching a monocrystalline silicon wafer (100) by employing a wet chemical anisotropic etching process. The main objective is to reduce the silicon wafer's front surface reflectance, improve surface morphology, enhance wettability, and increase the coverage area of the octagonal pyramids on the surface of silicon wafers. The reaction time of the etching process was kept precise under strict observation and control. The experimental results demonstrate a significant reduction in silicon wafers' optical surface reflectance, achieving the lowest reflectance of 8.87%, along with improved surface morphology, periodicity, and coverage of more than 88%. While adding hydrofluoric acid together with magnetic stirring (mechanical agitation) at 300 rpm was advantageous in forming the octagonal silicon pyramid with a high etch rate of 0.41 um/min and significantly reducing the reaction time.

An entry from the Cambridge Structural Database, the world’s repository for small molecule crystal structures. The entry contains experimental data from a crystal diffraction study. The deposited dataset for this entry is freely available from the CCDC and typically includes 3D coordinates, cell parameters, space group, experimental conditions and quality measures.