Materials Science in Semiconductor Processing

Data are raw reflectance data at different times and temperatures

Raw data.

In this article, we report the in-situ hydrothermal fabrication of ZnO/reduced-graphene-oxide nanocomposites with varying graphene oxide concentrations. The catalytic behavior of the nanocomposites was examined using methylene blue as a model pollutant. We demonstrate that the ZnO nanostructural morphology changes from nanoplate-like to nanoparticle-like with increasing graphene oxide concentration. Our nanocomposites are more photocatalytically efficient than pure ZnO, with efficiency increasing with increasing GO concentration.

The crystallographic data of ZnPc at a .cif file

All the data in this paper was included in this research file.

The figures and tables cited above describe the electronic and optical properties of silver sulfide showing important and new results for literature among which the photons application of Ag2S.

Fig.3. Output capacitance versus effective gate voltage, VG-VT. Fig. 4. Comparison of transfer characteristics among the three structure at Vds = 25 V. Fig. 5. Thermal characteristics curves of (a) Con. LDMOS, TG LT LDMOS, and SSG LT LDMOS surface temperature characteristics along the drift region. (b) Temperature as a function of Tox thickness variation. Fig. 6. The relationship between drain voltage and current at breakdown. equi-potential contours of three devices, the proposed device, BV = 117 V, Con. LDMOS, BV = 101 V and TG LT LDMOS, BV = 102 V is shown as an insert. Fig. 7. The dependence of the Nd as a function of the BV and Ron,sp. Fig. 8. shows the influence of the Wt on the BV and FOM of the SSG LT LDMOS. The inset shows the effect of the left trench width on the BV of the device. Fig. 9. The effect of the thickness variation of the buried oxide layer on the BV of the device at the breakdown (a) The effect of Tox thickness variation on BV (Wt=0.5µm). (b) The charge concentration on both sides of the buried oxide layer corresponding to different buried layer thicknesses. Fig. 10. BV, Ron,sp and FOM of SSG LT LDMOS versus PG oxide width for two different PG depths. (a) Influences of TG2 on BV and Ron,sp. (b) Influences of TG3 on BV and FOM. Fig. 11. Gate charge with a turn-on voltage of 60 V and the device length of 4 μm. The inset on the left is the gate charge test circuit, and the right side is the TG LT LDMOS, SSG LT LDMOS on-state simulation. Fig. 13. Ron,sp versus the BV for SSG LT LDMOS and other different types of LDMOS.

There are all data used to characterize the Optical characteristics of all samples.

This dataset contains the key measurement data, such as XRD, XPS and Raman spectroscopy.

Dataset for "Pulsed Laser Deposition of Nickel Oxide Films with Improved Optical Properties to Functionalize Solar Light Absorbing Photoanodes and Very Low Overpotential for Water Oxidation Catalysis". This dataset includes information about the optical, structural and electrochemical characterization of nickel oxide thin films synthesized through pulsed laser deposition. Different samples with variable thickness and structural properties were synthesized and characterized. Transmittance spectra of nickel oxide thin films deposited on fluorine doped tin oxide covered glass. The light transmittance in the UV-VIS-NIR range was evaluated after electrochemical cycles both in anodic and cathodic conditions. Raman spectra of the thin films as deposited. Stability of the FTO/NiOx electrodes under anodic conditions, in alkaline environment. Cyclic voltammetry curves measured on the FTO/NiOx electrodes in alkaline solution. Linear sweep voltammetry curves that show the catalytic performance of the synthesized thin films for water oxidation.